mitsubishi nch power mosfet FL14KM-9A high-speed switching use sep. 2001 mitsubishi nch power mosfet FL14KM-9A high-speed switching use 450 30 14 42 14 40 C 55 ~ +150 C 55 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit FL14KM-9A outline drawing dimensions in mm application smps, inverter fluorescent light sets, etc. to-220fn 10v drive v dss ............................................................................... 450v r ds (on) (max) .............................................................. 0.52 ? i d ......................................................................................... 14a 2.6 0.2 15 0.3 14 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? ? ? ? ? gate ? drain ? source
mitsubishi nch power mosfet FL14KM-9A high-speed switching use sep. 2001 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 450 30 2.0 3.0 0.40 2.80 8.0 1250 150 55 25 45 250 90 1.5 10 1 4.0 0.52 3.64 2.0 3.13 drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 450v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 10v i d = 7a, v gs = 10v i d = 7a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 7a, v gs = 10v, r gen = r gs = 50 ? i s = 7a, v gs = 0v channel to case
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